Swift heavy ion irradiation and annealing studies on the I–V characteristics of N-channel depletion Metal–oxide–semiconductor field-effect transistors

被引：0
|
作者：
N. Pushpa
A. P. Gnana Prakash
机构：
[1] JSS College,Department of PG Studies in Physics
[2] University of Mysore,Department of Studies in Physics
来源：
Indian Journal of Physics | 2015年 / 89卷
关键词：
Interface trapped charge; Oxide trapped charge; Threshold voltage; Transconductance; Mobility degradation; 85.30.Tv; 72.20.Jv; 61.82.Fk; 61.80.Ed;
D O I：
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中图分类号：
学科分类号：
摘要：
N-channel depletion MOSFETs were irradiated with different swift heavy ions viz., 175 MeV Ni13+ ions, 140 MeV Si10+ ions, 100 MeV F8+ ions, 95 MeV O7+ ions and 48 MeV Li3+ ions in the same dose range of 100 krad–100 Mrad. The different electrical characteristics of MOSFETs were studied before and after irradiation and after annealing. The degradation and recovery mechanisms were studied systematically. It was found that around 80 % degradation in transconductance and mobility and almost 100 % recoveries in the electrical characteristics of irradiated MOSFETs after annealing.
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页码：943 / 950
页数：7
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