Growth of nanoparticles in hydrogen-implanted palladium subsurfaces

被引:0
|
作者
F. Okuyama
机构
[1] Nagoya Institute of Technology,Graduate School of Engineering
来源
Applied Physics A | 2010年 / 100卷
关键词
Deuteride; Nanometric Dimension; Incline Wall; Bombardment Time; Slope Wall;
D O I
暂无
中图分类号
学科分类号
摘要
Solid particles with nanometric dimensions are shown to grow in the opened subsurface of a polycrystalline palladium (Pd) hydrogen-implanted at around 500°C. The particles are Pd in main composition and densely grown on sloping walls of fissured grain boundaries or cracks. The average grain size increases from deeper to shallow regions, suggesting that a negative temperature gradient toward the surface existed along the crack walls. The nanoparticles are certain to arise from the condensation of Pd vapors on the walls, forcing us to assume that hydrogen atoms implanted in an overpopulation heated their implantation zone so strongly as to vaporize Pd.
引用
收藏
页码:245 / 248
页数:3
相关论文
共 50 条
  • [21] Kinetic evolution of blistering in hydrogen-implanted silicon
    Coupeau, C.
    Parry, G.
    Colin, J.
    David, M. -L.
    Labanowski, J.
    Grilhe, J.
    APPLIED PHYSICS LETTERS, 2013, 103 (03)
  • [22] Role of strain in the blistering of hydrogen-implanted silicon
    Lee, Jung-Kun
    Lin, Yuan
    Jia, Q. X.
    Hochbauer, Tobias
    Jung, Hyun Suk
    Shao, Lin
    Misra, Amit
    Nastasi, Michael
    APPLIED PHYSICS LETTERS, 2006, 89 (10)
  • [23] ANNEALING BEHAVIOR OF HYDROGEN-IMPLANTED MAGNETIC GARNET
    WILTS, CH
    AWANO, H
    SPERIOSU, VS
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2161 - 2167
  • [24] REVERSIBLE TRANSFORMATION OF DEFECTS IN HYDROGEN-IMPLANTED SILICON
    GORELKINSKII, Y
    NEVINNYI, NN
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 677 - 682
  • [25] Development of microcracks in hydrogen-implanted silicon substrates
    Penot, Jean-Daniel
    Massy, Damien
    Rieutord, Francois
    Mazen, Frederic
    Reboh, Shay
    Madeira, Florence
    Capello, Luciana
    Landru, Didier
    Kononchuk, Oleg
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (12)
  • [26] Behaviour of oxygen-implanted and hydrogen-implanted SiGe/Si heterostructures
    An, ZH
    Zhang, M
    Men, CL
    Shen, QW
    Lin, ZX
    Li, KC
    Lin, CL
    CHINESE PHYSICS LETTERS, 2002, 19 (03) : 413 - 415
  • [27] Role of boron for defect evolution in hydrogen-implanted silicon
    Lee, JK
    Höchbauer, T
    Averitt, RD
    Nastasi, M
    APPLIED PHYSICS LETTERS, 2003, 83 (15) : 3042 - 3044
  • [28] Cathodoluminescence of wet, dry, and hydrogen-implanted silica films
    Fitting, HJ
    Ziems, T
    Salh, R
    Zamoryanskaya, MV
    Kolesnikova, KV
    Schmidt, B
    von Czarnowski, A
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2005, 351 (27-29) : 2251 - 2262
  • [29] Photoluminescence analysis of hydrogen-implanted CuInSe2
    Martin, RW
    Yakushev, MV
    Tomlinson, RD
    Hill, AE
    Pilkington, RD
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 973 - 976
  • [30] Origin of reverse annealing effect in hydrogen-implanted silicon
    Di, Z. F.
    Wang, Y. Q.
    Nastasi, M.
    Theodore, N. David
    APPLIED PHYSICS LETTERS, 2010, 96 (15)