On the growth, structure, and surface morphology of epitaxial CdTe films

被引：0
作者：
I. R. Nuriyev
M. A. Mehrabova
A. M. Nazarov
R. M. Sadigov
N. G. Hasanov
机构：
[1] Azerbaijan National Academy of Sciences,Abdullayev Institute of Physics
[2] Azerbaijan National Academy of Sciences,Institute of Radiation Problems
[3] Baku State University,undefined
来源：
Semiconductors | 2017年 / 51卷
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摘要：
The structure and surface morphology of epitaxial CdTe films grown on glassy substrates with and without compensation with an additional Te vapor source during growth are studied. The optimal conditions of the production of structurally perfect epitaxial films with a pure smooth surface with no inclusions of another phase (Tso = 1000–1100 K, Tsu = 570–670 K) are determined. It is established that, on glassy substrates, the epitaxial films grow via the (111) plane of the face-centered cubic (fcc) lattice with the parameter a = 6.481 Å. By varying the temperature of the main and compensating sources, CdTe films with n- and p-type conductivity are produced.
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页码：34 / 37
页数：3
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