An ultra-low power high-precision logarithmic-curvature compensated all-CMOS voltage reference in 65 nm CMOS

In this paper, a low-complexity resistorless high-precision sub-1 V MOSFET-only voltage reference is presented. To obtain an accurate output, a curvature-compensation technique is used, canceling its logarithmic temperature dependence regardless of the value of the mobility temperature exponent (γ)\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$(\gamma )$$\end{document}. The circuit is realized in 65 nm CMOS technology and yields an output voltage of 574 mV, a temperature coefficient of 3.5 ppm∘C\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\frac{{{\text{ppm}}}}{{^\circ {\text{C}}}}$$\end{document} in the range of − 50 to 150 °C, a power supply rejection ratio (PSRR) of − 103 dB at 100 Hz, a line sensitivity of 6μVV\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$6\,\frac{{\upmu {\text{V}}}}{{\text{V}}}$$\end{document} in the supply voltage range of 1.3–3 V, a power dissipation of 650nW at 1.3 V supply, and an output noise of 1.7 μV/Hz\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\mu V}/\sqrt {{\text{Hz}}}$$\end{document} at 100 Hz. The total active area of the design is 0.03 mm2. This voltage reference is suitable for low-power low-voltage applications which also require high precision.