Mechanism of the High X-ray Sensitivity of Single-Crystal CdTe<Ge> Detectors

被引：0
|
作者：
P. N. Tkachuk
A. N. Raranskii
Ya. M. Struk
V. I. Tkachuk
机构：
[1] Fed'kovich State University,
来源：
Inorganic Materials | 2002年 / 38卷
关键词：
Inorganic Chemistry; Structural Change; Defect System; Doping Level; GeTe;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The high x-ray sensitivity of p-type CdTe<Ge> single crystals under the conditions of ambipolar conduction is interpreted in a model considering local structural changes near GeCd substitutional defects. The model offers detailed insight into the mechanism responsible for the formation of the GeTe center at doping levels above 5.0 × 1015 cm–3 and makes it possible to identify the optimal defect system in CdTe crystals for resistive x-ray detectors.
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页码：998 / 1001
页数：3
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