Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction

被引:0
作者
Yu Xiao
Junyu Qu
Ziyu Luo
Ying Chen
Xin Yang
Danliang Zhang
Honglai Li
Biyuan Zheng
Jiali Yi
Rong Wu
Wenxia You
Bo Liu
Shula Chen
Anlian Pan
机构
[1] Hunan University,Key Laboratory for Micro
[2] Hunan University,Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering
来源
Frontiers of Optoelectronics | 2022年 / 15卷
关键词
MoS; WSe; Chemical vapor deposition (CVD); Vertical heterostructure; Optoelectronic transistor;
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