Quantitative Analysis of Electromigration Damage in Al-based Conductor Lines

被引：0

作者：

O. Kraft

J. E. Sanchez

M. Bauer

E. Arzt

机构：

[1] Max-Planck-Institut für Metallforschung and Institut für Metallkunde der Universität,

[2] Now at Materials Science and Engineering,undefined

[3] The University of Michigan,undefined

[4] Now at Siemens AG,undefined

来源：

Journal of Materials Research | 1997年 / 12卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Electromigration damage in Al-based interconnects with three compositions (pure Al, Al–1%Si–0.5%Cu, and Al–2%Cu) was studied quantitatively. Using scanning electron microscopy, the spacings between more than 1000 voids and hillocks were measured. The distribution of the spacings was found to be a function of the composition, the applied current density, and the linewidth. The measurements confirm the existence of a threshold product of current density and diffusion length. In particular, a dependence of this threshold product on the Cu content was found. The results of the analysis show that there are clear correlations between the details of the microscopic damage processes and the lifetime of the conductor lines.

引用

页码：2027 / 2037

页数：10