Monolayer MoS2 epitaxy

被引:0
|
作者
Zheng Wei
Qinqin Wang
Lu Li
Rong Yang
Guangyu Zhang
机构
[1] Chinese Academy of Sciences,Beijing National Laboratory for Condensed Matter Physics and Institute of Physics
[2] University of Chinese Academy of Sciences,School of Physical Sciences
[3] Songshan Lake Materials Laboratory,undefined
来源
Nano Research | 2021年 / 14卷
关键词
monolayer MoS; epitaxy; domain size; domain alignment; heterostructures;
D O I
暂无
中图分类号
学科分类号
摘要
As an emerging two-dimensional (2D) semiconductor material, monolayer MoS2 has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical applications, high-quality and large-area MoS2 with controllable properties is required. Among the many different synthesis techniques, epitaxy provides a promising route for producing MoS2 monolayers. Here, we review the epitaxial growth of monolayer MoS2 on various substrates, with a particular focus on large-scale films with large domain sizes and high domain alignments. Finally, we offer perspectives and challenges for future research and applications of this technology.
引用
收藏
页码:1598 / 1608
页数:10
相关论文
共 50 条
  • [21] Compliant substrate epitaxy: Au on MoS2
    Zhou, Yuzhi
    Kiriya, Daisuke
    Haller, E. E.
    Ager, Joel W., III
    Javey, Ali
    Chrzan, D. C.
    PHYSICAL REVIEW B, 2016, 93 (05)
  • [22] Piezoelectric electrostatic superlattices in monolayer MoS2
    Ramasubramaniam, Ashwin
    Naveh, Doron
    PHYSICAL REVIEW MATERIALS, 2024, 8 (01):
  • [23] Second harmonic microscopy of monolayer MoS2
    Kumar, Nardeep
    Najmaei, Sina
    Cui, Qiannan
    Ceballos, Frank
    Ajayan, Pulickel M.
    Lou, Jun
    Zhao, Hui
    PHYSICAL REVIEW B, 2013, 87 (16)
  • [24] Toward Ferroelectric Control of Monolayer MoS2
    Nguyen, Ariana
    Sharma, Pankaj
    Scott, Thomas
    Preciado, Edwin
    Klee, Velveth
    Sun, Dezheng
    Lu, I-Hsi
    Barroso, David
    Kim, SukHyun
    Shur, Vladimir Ya
    Akhmatkhanov, Andrey R.
    Gruverman, Alexei
    Bartels, Ludwig
    Dowben, Peter A.
    NANO LETTERS, 2015, 15 (05) : 3364 - 3369
  • [25] Energy Dissipation in Monolayer MoS2 Electronics
    Yalon, Eilam
    McClellan, Connor J.
    Smithe, Kirby K. H.
    Rojo, Miguel Munoz
    Xu, Runjie Lily
    Suryavanshi, Saurabh V.
    Gabourie, Alex J.
    Neumann, Christopher M.
    Xiong, Feng
    Farimani, Amir Barati
    Pop, Eric
    NANO LETTERS, 2017, 17 (06) : 3429 - 3433
  • [26] Adsorption of atomic hydrogen on monolayer MoS2
    Hu, Huimin
    Choi, Jin-Ho
    NANOTECHNOLOGY, 2021, 32 (23)
  • [27] Surface states in a monolayer MoS2 transistor
    Lu, Zhongyuan
    Lee, Oukjae
    Wong, Justin C.
    Salahuddin, Sayeef
    JOURNAL OF MATERIALS RESEARCH, 2016, 31 (07) : 911 - 916
  • [28] Neutral Exciton Diffusion in Monolayer MoS2
    Uddin, Shiekh Zia
    Kim, Hyungjin
    Lorenzon, Monica
    Yeh, Matthew
    Lien, Der-Hsien
    Barnard, Edward S.
    Htoon, Han
    Weber-Bargioni, Alexander
    Javey, Ali
    ACS NANO, 2020, 14 (10) : 13433 - 13440
  • [29] Rolling Up a Monolayer MoS2 Sheet
    Meng, Jianling
    Wang, Guole
    Li, Xiaomin
    Lu, Xiaobo
    Zhang, Jing
    Yu, Hua
    Chen, Wei
    Du, Luojun
    Liao, Mengzhou
    Zhao, Jing
    Chen, Peng
    Zhu, Jianqi
    Bai, Xuedong
    Shi, Dongxia
    Zhang, Guangyu
    SMALL, 2016, 12 (28) : 3770 - 3774
  • [30] Difference frequency generation in monolayer MoS2
    Wang, Yadong
    Ghotbi, Masood
    Das, Susobhan
    Dai, Yunyun
    Li, Shisheng
    Hu, Xuerong
    Gan, Xuetao
    Zhao, Jianlin
    Sun, Zhipei
    NANOSCALE, 2020, 12 (38) : 19638 - 19643