The improvement of electrical properties of Pd-based contact to p-GaN by surface treatment

被引:0
作者
Dae-Woo Kim
Jun Cheol Bae
Woo Jin Kim
Hong Koo Baik
Jae-Min Myoung
Sung-Man Lee
机构
[1] Yonsei University,Thin Film Materials Laboratory, Dept. of Metallurgical Engineering
[2] Yonsei University,Information & Electronic Materials Laboratory Dept. of Metallurgical Engineering
[3] Kangwon National University,Department of Advanced Materials Science and Engineering
来源
Journal of Electronic Materials | 2001年 / 30卷
关键词
p-type GaN; Pd ohmic contact; aqua regia treatment; annealing; x-ray photoelectron spectroscopy;
D O I
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中图分类号
学科分类号
摘要
The surface treatment effect on the interfacial reaction and electrical property of Au/Pd contacts to p-GaN has been investigated. The contact resistance of Au/Pd contacts on boiling aqua regia treated p-GaN was lower than aqua regia treated p-GaN by one order of magnitude. The specific contact resistivity of Au/Pd contacts on boiling aqua regia treated p-GaN increased with annealing temperature, but that on aqua regia treated p-GaN decreased with annealing temperature and it showed minimum value after annealing at 700°C. According to the results of the interfacial reaction, the Au/Pd contact metals reacted more easily with aqua regia treated p-GaN than boiling aqua regia treated p-GaN. X-ray photoelectron spectroscopy analysis revealed that the relative surface Ga-to-N ratio of boiling aqua regia treated p-GaN was lower than that of aqua regia treated p-GaN and the surface of p-GaN was modified from Ga-termination to N-termination by surface treatment using boiling aqua regia. According to the results of surface analysis and interfacial reaction of Au/Pd/p-GaN, it could be concluded that the different temperature dependence of contact resistance according to the surface treatment conditions was related strongly to the surface modification of p-GaN from Ga-termination to N-termination.
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页码:183 / 187
页数:4
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