A highly linear and fully-integrated FMCW synthesizer for 60 GHz radar applications with 7 GHz bandwidth

被引:0
|
作者
Ivan M. Milosavljević
Ɖorđe P. Glavonjić
Dušan P. Krčum
Lazar V. Saranovac
Vladimir M. Milovanović
机构
[1] University of Belgrade,Department of Electronics, School of Electrical Engineering
[2] NovelIC Microsystems,Faculty of Engineering
[3] University of Kragujevac,undefined
来源
Analog Integrated Circuits and Signal Processing | 2017年 / 90卷
关键词
FMCW synthesizer; Fractional-N PLL; Highly linear chirps; Multichirp generation; 60 GHz Colpitts VCO; Automatic amplitude and frequency calibrations;
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学科分类号
摘要
A highly linear and fully-integrated frequency-modulated continuous-wave (FMCW) generator based on a fractional-N phase-locked loop (PLL) that is able to synthesize modulation schemes in 57–64 GHz range is proposed in this paper. The fractional-N PLL employs Colpitts voltage-controlled oscillator (VCO) at 60 GHz with 13.5% tuning range. Automatic amplitude and frequency calibrations are implemented to avoid drifts due to process, voltage and temperature variations and to set the center frequency of the VCO. Five-stage multi-modulus divider is used for division ratio switching, controlled by the sigma-delta (ΣΔ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\Sigma \Delta$$\end{document}) modulator MASH 1-1-1. The frequency sweep (chirp) bandwidth and duration are fully programmable via serial peripheral interface allowing up to 16 different chirps in complex modulation scheme. The PLL reference signal is 250 MHz provided by external low-noise signal generator which is also used for digital modules clock. The overall PLL phase noise is lower than −80 dBc/Hz at 10 kHz offset and the chirp linearity is better than 0.01%. The complete FMCW synthesizer is implemented and verified as a stand-alone chip in a commercially available SiGe HBT 130 nm BiCMOS technology. The total chip area is 2.04mm2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$2.04\,\text {mm}^2$$\end{document}, and the total power consumption is 280 mW.
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页码:591 / 604
页数:13
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