Integrated D-band transmitter and receiver for wireless data communication in 65 nm CMOS

被引:0
作者
Zhiwei Xu
Qun Jane Gu
Yi-Cheng Wu
Mau-Chung Frank Chang
机构
[1] HRL Laboratories LLC,Electrical and Computer Engineering Department
[2] University of California,Electrical Engineering Department
[3] University of California,undefined
来源
Analog Integrated Circuits and Signal Processing | 2015年 / 82卷
关键词
Injection locking buffer; Low noise amplifier (LNA); Non-coherent modulation; On–off key; Power amplifier (PA); Mm-wave circuits; Voltage controlled oscillator (VCO);
D O I
暂无
中图分类号
学科分类号
摘要
A 140 GHz transmitter (Tx) and receiver (Rx) chip set has been developed in 65 nm CMOS by using on–off keying non-coherent modulation to support high speed proximity data communication. To the author’s best knowledge, it enables the first integrated multi-Gbps data link in D-band by saving power hungry frequency synthesizer, high speed data convertors and complicated digital signal processor. The Tx and Rx occupy 0.03 and 0.12 mm2 chip areas, respectively. To validate the communication at 140 GHz carrier frequency, a data link has been built to demonstrate up to 2.5 Gbps data rate with power consumption of 115/120 mW for Tx/Rx respectively.
引用
收藏
页码:171 / 179
页数:8
相关论文
共 4 条
  • [1] Radisic V(2008)Demonstration of 184 and 255-GHz amplifiers using InP HBT Technology IEEE Microwave and Wireless Components Letters 18 281-283
  • [2] Xu Z(2011)A Three Stage, Fully Differential 128–157 GHz CMOS Amplifier with Wide Band Matching IEEE Microwave and Wireless Components Letters 21 550-552
  • [3] Gu QJ(undefined)undefined undefined undefined undefined-undefined
  • [4] Chang M-CF(undefined)undefined undefined undefined undefined-undefined