Thin partially reduced oxide-graphene films: Structural, optical, and electrical properties

被引：26

作者：

Alexandrov G.N. ^{[1
]}

Smagulova S.A. ^{[1
]}

Kapitonov A.N. ^{[1
]}

Vasil'eva F.D. ^{[1
]}

Kurkina I.I. ^{[1
]}

Vinokurov P.V. ^{[1
]}

Timofeev V.B. ^{[1
]}

Antonova I.V. ^{[2
]}

机构：

[1] Ammosov North-Eastern Federal University, Yakutsk, 677000

[2] Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090

来源：

Nanotechnologies in Russia | 2014年 / 9卷 / 7-8期

关键词：

Oxide films - Flexible electronics - Thin films - Graphene - Hydrazine - Conductive films;

D O I：

10.1134/S1995078014040028

中图分类号：

学科分类号：

摘要：

High-resistive (1012 Ohm/□) oxide-graphene films with thickness varying from 5 nm to several micrometers were produced and studied. Films of 5-150 nm on glass had a transparency of 93-98% for wave-lengths of 400-700 nm, while the transparency of a suspended film with an area of 2-3 cm2 and thickness of 200-400 nm amounted to 82-90%. The durable reduction of such films in hydrazine vapor results in a resistance decrease to 104 Ohm/□. A new approach is proposed which allows us to reduce in hydrazine vapor only the upper layers of an oxide-graphene film and form thin-film structures comprising conducting and insulating layers. The films are promising for a wide spectrum of optical and electronic applications, including flexible electronics. © 2014 Pleiades Publishing, Ltd.

引用

页码：363 / 368

页数：5

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