X-ray electric properties of CdIn2S4 monocrystal

被引：1

作者：

Mustafaeva S.N. ^{[1
]}

Asadov M.M. ^{[1
]}

Guseinov D.T. ^{[1
]}

机构：

[1] Institute of Physics, National Academy of Sciences of Azerbaijan

来源：

Inorganic Materials: Applied Research | 2010年 / 1卷 / 04期

关键词：

CdIn[!sub]2[!/sub]S[!sub]4[!/sub] monocrystals; Effective hardness of X rays; Radiation dose; Roentgen-ampere characteristics; X-ray detector; X-ray sensitivity;

D O I：

10.1134/S2075113310040052

中图分类号：

学科分类号：

摘要：

X-ray dosimetric properties of CdIn2S4 monocrystals grown from a synthesized compound using the method of chemical transport reactions are studied. It is demonstrated that the coefficient of X-ray sensitivity of CdIn2S4 monocrystals varies within 2.42 × 10-10-2.43 × 10-9 (A min)/(V R) for effective radiation hardness Va = 25-50 keV and dose power E = 0.75-78.05 R/min. It is established that the dependence of the stationary X-ray current on the X-ray dose has apower character, and with increasing V a, the roentgenampere characteristics of CdIn2S 4 tend to become linear. © Pleiades Publishing, Ltd., 2010.

引用

页码：293 / 296

页数：3

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