Temperature dependence of the band gap of Cu2ZnSnS4 single crystals

被引：0
|
作者：
I. V. Bodnar
机构：
[1] Belarusian State University of Information and Radio Electronics,
来源：
Semiconductors | 2015年 / 49卷
关键词：
Transmittance Spectrum; Fundamental Absorption Edge; Mendis; Straight Portion; Absorption Edge Shift;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The transmittance spectra of Cu2ZnSnS4 single crystals grown by the technique of chemical gastransport reactions are studied in the region of the fundamental absorption edge in the temperature range T = 20 to 300 K. From the experimental spectra, the band gap of the compound is determined and the temperature dependence of the band gap is established. It is found that the band gap increases, as temperature is increased. It is shown that the temperature dependence is adequately described by the corresponding theoretical expression.
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页码：582 / 585
页数：3
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