Temperature dependence of the band gap of Cu2ZnSnS4 single crystals

被引:0
|
作者
I. V. Bodnar
机构
[1] Belarusian State University of Information and Radio Electronics,
来源
Semiconductors | 2015年 / 49卷
关键词
Transmittance Spectrum; Fundamental Absorption Edge; Mendis; Straight Portion; Absorption Edge Shift;
D O I
暂无
中图分类号
学科分类号
摘要
The transmittance spectra of Cu2ZnSnS4 single crystals grown by the technique of chemical gastransport reactions are studied in the region of the fundamental absorption edge in the temperature range T = 20 to 300 K. From the experimental spectra, the band gap of the compound is determined and the temperature dependence of the band gap is established. It is found that the band gap increases, as temperature is increased. It is shown that the temperature dependence is adequately described by the corresponding theoretical expression.
引用
收藏
页码:582 / 585
页数:3
相关论文
共 50 条
  • [1] Temperature dependence of the band gap of Cu2ZnSnS4 single crystals
    Bodnar, I. V.
    SEMICONDUCTORS, 2015, 49 (05) : 582 - 585
  • [2] Growth and characterization of Cu2ZnSnS4 single crystals
    Nagaoka, Akira
    Yoshino, Kenji
    Taniguchi, Hiroki
    Taniyama, Tomoyasu
    Kakimoto, Koichi
    Miyake, Hideto
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (07): : 1328 - 1331
  • [3] A study of energy band gap versus temperature for Cu2ZnSnS4 thin films
    Sarswat, Prashant K.
    Free, Michael L.
    PHYSICA B-CONDENSED MATTER, 2012, 407 (01) : 108 - 111
  • [4] Band gap change induced by defect complexes in Cu2ZnSnS4
    Huang, Dan
    Persson, Clas
    THIN SOLID FILMS, 2013, 535 : 265 - 269
  • [5] Temperature Dependence of Cu2ZnSnS4 Photovoltaic Cell Properties
    Tajima, Shin
    Katagiri, Hironori
    Jimbo, Kazuo
    Sugimoto, Noriaki
    Fukano, Tatsuo
    APPLIED PHYSICS EXPRESS, 2012, 5 (08)
  • [6] Effect of intrinsic strain on the optical band gap of single phase nanostructured Cu2ZnSnS4
    Ansari, Mohd Zubair
    Khare, Neeraj
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 63 : 220 - 226
  • [7] Temperature-dependent photocarrier recombination dynamics in Cu2ZnSnS4 single crystals
    Le Quang Phuong
    Okano, Makoto
    Yamada, Yasuhiro
    Nagaoka, Akira
    Yoshino, Kenji
    Kanemitsu, Yoshihiko
    APPLIED PHYSICS LETTERS, 2014, 104 (08)
  • [8] Cu2ZnGeSe4 single crystals: Growth, structure and temperature dependence of band gap
    Bodnar, Ivan, V
    Khoroshko, Vitaly V.
    Yashchuk, Veronika A.
    Gremenok, Valery F.
    Kazi, Mohsin
    Khandaker, Mayeen U.
    Zubar, Tatiana I.
    Tishkevich, Daria I.
    Trukhanov, Alex, V
    Trukhanov, Sergei, V
    JOURNAL OF CRYSTAL GROWTH, 2024, 626
  • [9] Band gap shift of Cu2ZnSnS4 thin film by residual stress
    Kim, Chan
    Hong, Sungwook
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 799 : 247 - 255
  • [10] Annealing behaviour of photoluminescence spectra on Cu2ZnSnS4 single crystals
    Seto, Satoru
    Araki, Hideaki
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 6, 2017, 14 (06):