Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers

被引：0
作者：
A. V. Voitsekhovskii
N. A. Kulchitskii
S. N. Nesmelov
S. M. Dzyadukh
V. S. Varavin
S. A. Dvoretskii
N. N. Mikhailov
M. V. Yakushev
G. Yu. Sidorov
机构：
[1] National Research Tomsk State University,
[2] JSC Scientific and Production Association Orion,undefined
[3] Rzhanov Institute of Semiconductor Physics,undefined
[4] Siberian Branch of the Russian Academy of Science,undefined
来源：
Journal of Communications Technology and Electronics | 2021年 / 66卷
关键词：
MIS structures; HgCdTe; molecular-beam epitaxy; differential resistance; graded-gap layer;
D O I：
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学科分类号：
摘要：
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页码：337 / 339
页数：2
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