Features of the Kinetics of Bulk and Heterogeneous Processes in CHF3 + Ar and C4F8 + Ar Plasma Mixtures

被引：0
作者：
Murin D.B. [1 ]
Efremov A.M. [1 ]
Kwon K.-H. [2 ]
机构：
[1] Ivanovo State University of Chemistry and Technology, Ivanovo
[2] Korea University, 208 Seochang-Dong, Chochiwon
来源：
Russian Microelectronics | 2019年 / 48卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
Comparative studies - Diagnostic methods - Electrophysical parameters - Etching selectivity - High frequency HF - Plasma composition - Plasma-chemical process - Stationary concentrations;
D O I：
10.1134/S1063739719020070
中图分类号：
学科分类号：
摘要：
Abstract: We carry out a comparative study of the kinetics of plasma-chemical processes and plasma composition in CHF3 + Ar and C4F8 + Ar mixtures under the conditions of a high-frequency (13.56 MHz) induction discharge. Using diagnostic methods and plasma modeling, the general features and differences of the plasma’s electrophysical parameters in the studied systems are established together with the key bulk processes that determine the stationary concentrations of neutral particles. Тhe CHF3 + Ar system in the range 0–75% Ar is shown to be characterized by lower values of the flux densities of the fluorine atoms and polymer of the forming radicals. Model analysis of the kinetics of the heterogeneous processes (etching, polymerization, degradation of the polymer film) confirmed the advantage of the C4F8 + Ar system of silicon etching anisotropy and etching selectivity compared to the SiO2/Si system. © 2019, Pleiades Publishing, Ltd.
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页码：99 / 106
页数：7
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