Realization with Fabrication of Dual-Gate MOSFET Based Source Follower

The research work designs a source follower (common drain amplifier) using dual-gate MOSFET. The theoretical background for the fundamental concepts involved in this work has been analyzed. The mathematical analysis of circuit design based on the basic concepts has been performed. Since the DG MOSFET provides twice the drain current flow compared to the traditional MOSFET, which improves various circuit parameters, increasing the device performance and efficiency of the source follower circuit. Two dual-gate MOSFET source follower models, using DC and AC analysis, have been proposed in the research work. It aims to improve the operational feasibility and stability of the source follower in Radio-Frequency (RF) applications.