Loss of oxygen and carbon during donor formation in CZ-silicon

被引：0
|
作者：
O M Prakash
Shyam Singh
机构：
[1] G.B. Pant University of Agriculture and Technology,Department of Physics
来源：
Bulletin of Materials Science | 1998年 / 21卷
关键词：
Donors; kinetics; activation energy; oxygen precipitation; silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Due to a lack of proper understanding about the formation mechanism of oxygen related donors during the transition temperature range (465–540°C) which exhibits the transition of TDs to NDs, an attempt has been made to study their behaviour in the present context. We have found the formation and diffusion of molecule like oxygen at low temperature annealing of silicon and observed that second order kinetics of oxygen diffusion holds good. A relatively low value of 0·6 eV has been estimated to be the activation energy for the diffusion of oxygen in silicon which is supposed to be due to the hydrogen passivation.
引用
收藏
页码：399 / 402
页数：3
相关论文
共 50 条
  • [1] Loss of oxygen and carbon during donor formation in CZ-silicon
    Prakash, OM
    Singh, S
    BULLETIN OF MATERIALS SCIENCE, 1998, 21 (05) : 399 - 402
  • [2] THERMAL DONOR FORMATION AND OXYGEN PRECIPITATION IN CZ-SILICON
    KUMAR, T
    SINGH, S
    BULLETIN OF ELECTROCHEMISTRY, 1994, 10 (11-12): : 518 - 521
  • [3] Role of oxygen and carbon on donor formation in step-annealed CZ-silicon
    Dubey, V
    Singh, S
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2004, 65 (07) : 1265 - 1269
  • [4] Role of oxygen on donor formation in CZ-silicon during 430-630 °C heat treatment
    G.B. Pant Univ of Agriculture &, Technology, Pantnagar, India
    Diffus Def Data Pt B, (123-130):
  • [5] Role of oxygen on donor formation in CZ-silicon during 430-630 °C heat treatment
    Prakash, O
    Singh, S
    SOLID STATE PHENOMENA, 1997, 55 : 123 - 130
  • [6] CARBON AND OXYGEN PRECIPITATION BEHAVIOR IN CZ-SILICON CRYSTALS
    SHIMURA, F
    FRAUNDORF, P
    BAIARDO, JP
    HOCKETT, RS
    FRAUNDORF, GK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C356 - C356
  • [7] Locking of dislocations by oxygen in Cz-silicon
    Senkader, S
    Jurkschat, K
    Wilshaw, PR
    Falster, R
    PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON, 1999, 99 (01): : 280 - 289
  • [8] Formation of donor and acceptor states of the divacancy-oxygen centre in p-type Cz-silicon
    Ganagona, N.
    Raeissi, B.
    Vines, L.
    Monakhov, E. V.
    Svensson, B. G.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (43)
  • [9] Formation of oxygen related donors in step-annealed CZ-silicon
    Vikash Dubey
    Shyam Singh
    Bulletin of Materials Science, 2002, 25 : 589 - 592
  • [10] Formation of oxygen related donors in step-annealed CZ-silicon
    Dubey, V
    Singh, S
    BULLETIN OF MATERIALS SCIENCE, 2002, 25 (07) : 589 - 592
12345