Growth of an Al2O3 Layer and Sn@Al2O3 Core-Shell Nanoparticles by Using a Silicon Oxide/Aluminum Bilayer

被引：0
作者：
Jong-Hwan Yoon
机构：
[1] Kangwon National University,Department of Physics, College of Natural Sciences
来源：
Journal of the Korean Physical Society | 2020年 / 76卷
关键词：
Aluminum dioxide; Core-shell nanoparticle; Stacked dielectric oxide; Floating gate memory;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An alternative method for the fabrication of an aluminum oxide (Al2O3) layer was employed to produce Sn@Al2O3 core-shell nanoparticles (NPs). The Al2O3 layer was formed by low-temperature annealing of the bilayer silicon-rich oxide (SiOx)/aluminum (Al) structure. The resulting Al2O3 layer was found to have a polycrystalline structure, in which the crystallites exhibited a γ-Al2O3 phase. Based on this method, a Sn@Al2O3 core-shell NP layer was formed between the tunneling and the control SiO2 layers, providing a Sn NP floating gate with a SiO2/Al2O3 dielectric stacked tunneling barrier. Capacitance-voltage measurements on this structure confirmed high charge storage characteristics, thereby rendering this material suitable for use in stable memory device applications.
引用
收藏
页码：171 / 175
页数：4
相关论文
共 27 条
  • [1] Robertson J(2004)undefined Eur. Phys. J. Appl. Phys. 28 265-undefined
  • [2] Wang B(2018)undefined Chem. Rev. 118 5690-undefined
  • [3] Cheng C-C(2008)undefined J. Electrochem. Soc. 155 G203-undefined
  • [4] Xu K(2013)undefined J. Appl. Phys. 113 024504-undefined
  • [5] Govoreanu B(2003)undefined IEEE Elec. Dev. Lett. 24 99-undefined
  • [6] Blomme P(2011)undefined Appl. Phys. A 102 921-undefined
  • [7] Rosmeulen M(2005)undefined J. Appl. Phys. 97 024303-undefined
  • [8] Van Houdt J(2006)undefined Phys. Rev. B 74 153305-undefined
  • [9] You H-W(2005)undefined Solid State Elec. 49 1833-undefined
  • [10] Son J-W(2002)undefined IEEE Trans. Elec. Dev. 49 1606-undefined
123