Design and Performance of Charge-Plasma-Based Schottky –FET CMOS Circuit Ring Oscillator for High Density ICs

In this work, we developed and explored the CMOS circuits ring oscillator with n- and p-channel on scaled SB-FETs for low power applications. Newly, a source-side charge plasma schottky barrier (SB) SB-FETs have been acquainted as the furthermost practical at nano-meter node technology. So, it is essential to examine the electrical characteristics of SB-FETs and their performance. Initially, we have been explored the source-side charge plasma SB-FET and its electrical characteristics has been simulated in compared with conventional SB-FET. The SILVACO simulator is used to simulate the proposed and conventional SB-FETs. In this source-side charge plasma SB-FET technique has improved resolution, and deliver outstanding concert (higher Ion/Ioff ratio) than conventional device reported in this research. Moreover, the precise exploration of the on-state performance of SB-FETs is mostly resolved by the electron and hole energy band of the channel. Additional, for the first time, source-side charge plasma SB-FET-based CMOS inverter and ring oscillator circuits have been calculated by the numerical simulator. The concentrated gate capacitance also grades in compact dynamic power degeneracy of source-side charge plasma schottky barrier SB-FET CMOS circuits and ring oscillator suggest lower voltage of process with condensed power intake, and great noise protection compared with convention device.