Influence of neutron radiation on breakdown voltage of silicon voltage limiter

被引：0

作者：

Rakhmatov, A.Z. ^{[1
]}

Petrov, D.A. ^{[2
]}

Karimov, A.V. ^{[3
]}

Yodgorova, D.M. ^{[3
]}

Abdulkhaev, O.A. ^{[3
]}

机构：

[1] JSC FOTON, Tashkent, Uzbekistan

[2] JSC FOTON Branch Office, Kyiv, Ukraine

[3] Phys.-Tech. Inst. of the Sci. Assoc. Physics-Sun of Academy Sciences of Republic of Uzbekistan, Tashkent, Uzbekistan

来源：

Radioelectronics and Communications Systems | 2012年 / 55卷 / 07期

关键词：

Neutron irradiation - Radiation - Silicon;

D O I：

10.3103/S0735272712070060

中图分类号：

学科分类号：

摘要：

Experimental study of silicon voltage limiters' breakdown voltage dependence on neutron radiation was conducted. It revealed that with increase of radiation density from 0.1 1014 to 2 1015 N/cm2 the breakdown voltage monotonously increases: the smaller the breakdown voltage, the higher radiation density is needed to provide nominal breakdown voltage. Test curves which may be used for stabilization (normalization) of the breakdown voltage for samples with technological variations are suggested. © Allerton Press, Inc., 2012.

引用

页码：332 / 334

页数：2