High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates

被引：0
|
作者：
M. V. Maksimov
Yu. M. Shernyakov
N. V. Kryzhanovskaya
A. G. Gladyshev
Yu. G. Musikhin
N. N. Ledentsov
A. E. Zhukov
A. P. Vasil’ev
A. R. Kovsh
S. S. Mikhrin
E. S. Semenova
N. A. Maleev
E. V. Nikitina
V. M. Ustinov
Zh. I. Alferov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2004年 / 38卷
关键词：
GaAs; Output Power; Magnetic Material; Buffer Layer; Maximum Output;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Light-current, spectral, and temperature characteristics of long-wavelength (1.46–1.5 µm) lasers grown on GaAs substrates, with an active area based on InAs-InGaAs quantum dots, are studied. To reach the required lasing wavelength, quantum dots were grown on top of a metamorphic InGaAs buffer layer with an In content of about 20%. The maximum output power in pulsed mode was 7 W at room temperature. The differential efficiency of the laser, which had a 1.5-mm-long cavity, was 50%. The temperature dependence of the threshold current is described by a characteristic temperature of 61 K in the temperature range 10–73°C.
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页码：732 / 735
页数：3
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