Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

被引：0

作者：

Y. S. Ergashov

机构：

[1] Tashkent State Technical University,

来源：

Technical Physics | 2017年 / 62卷

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摘要：

The variations in the composition and structure of CoSi2/Si(111) surface layers under Ar+ ion bombardment with subsequent annealing has been studied. It has been demonstrated that nanocluster phases enriched with Si atoms form on the CoSi2 surface at low doses D ≤ 1015 cm–2, and a pure Si nanofilm forms at high doses.

引用

页码：777 / 780

页数：3

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