Operation methods of resistive random access memory

被引：0
|
作者：
GuoMing Wang
ShiBing Long
MeiYun Zhang
Yang Li
XiaoXin Xu
HongTao Liu
Ming Wang
PengXiao Sun
HaiTao Sun
Qi Liu
HangBing Lü
BaoHe Yang
Ming Liu
机构：
[1] Tianjin University of Technology,Tianjin Key Laboratory of Film Electronic and Communication Devices
[2] Chinese Academy of Sciences,Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics
来源：
Science China Technological Sciences | 2014年 / 57卷
关键词：
resistive random access memory; operation method; voltage sweeping mode; current sweeping mode; constant current stress; constant voltage stress; rectangular pulse mode; triangle pulse mode;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), constant current stress (CCS), constant voltage stress (CVS), rectangular pulse mode (RPM), and triangle pulse mode (TPM). Meanwhile, the effects of these measurement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summarized and analyzed.
引用
收藏
页码：2295 / 2304
页数：9
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