Optoelectronic and Mechanical Properties of InSb Semiconductor Under the Effect of Temperature

The effect of temperature on the optoelectronic properties of InSb semiconductor such as electronic band structure, direct and indirect energy gaps has been calculated using the local empirical pseudo-potential method (EPM). The variation of optical properties such as optical dielectric constant and refractive index with temperature from (0 to 500 K) has been examined. The elastic constants C11, C12, C44, bulk (B), Young’s (Y) and shear (Cs) moduli have been studied as a function of temperature. The present calculated data are compared with the available experimental values and show excellent agreement. New calculated data at different temperatures have been obtained. No such experimental data are found meaning, the present study is a reference for future work. It was found that the temperature effect is minor on the electronic properties of InSb, therefore this material can be used for fabrication and design of optoelectronic devices.