The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier

被引：0
|
作者：
A. K. Shestakov
K. S. Zhuravlev
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
来源：
Semiconductors | 2011年 / 45卷
关键词：
GaAs; Charge Carrier; Charge Density; Activation Coefficient; Threshold Voltage;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A GaAs field-effect ion-implanted transistor with a Schottky barrier is simulated. The doping profile obtained when doping through an insulator mask is determined and the dependences of the static transistor characteristics on the parameters of the doping profile are calculated and analyzed. The physical processes controlling the transistor characteristics in the case of a variation in the parameters of its doping profile and the coefficient of compensation of the substrate are studied. Based on calculations, the optimal doping-profile parameters ensuring the best characteristics for transistors are predicted.
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页码：1589 / 1599
页数：10
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