Numerical Study of Strained GaAs1−xNx/GaAs Quantum-Well Laser

被引：0
作者：
M. Lahoual
A. Gueddim
N. Bouarissa
机构：
[1] University of Djelfa,Materials Science and Informatics Laboratory, Faculty of Science
[2] University of M’sila,Laboratory of Materials Physics and Its Applications, Faculty of Science
来源：
Transactions on Electrical and Electronic Materials | 2019年 / 20卷
关键词：
Quantum well; Laser diode; GaAs; N; Optical gain;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The optical gain of a strained GaAs1−xNx/GaAs quantum-well laser has been calculated for a nitrogen concentration of 0.03 corresponding to a so-called dilute alloy. The effect of the density of carriers along with that of the quantum well width on the optical gain of the considered laser have been investigated and analyzed. Besides, the emitted wavelength has been also derived as a function of the quantum well width. Numerical results clearly show that by increasing the density of carriers and the quantum well width the optical gain is increased. The emitted wavelength is also enhanced as the quantum well width is augmented. The laser diode being studied here is shown to emit in the infrared-red region of the electromagnetic spectrum.
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页码：344 / 349
页数：5
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