A mechanical ramp type of electron–hole semiconducting model with laser pulses and variable thermal conductivity

This work introduces a novel model that describes the elastic-mechanical-thermodiffusion waves of semiconductor material. The holes and electrons interaction is considered when the material is exposed to laser pulses. The thermal conductivity can be chosen as a function of temperature. The photothermal (PT) effect during the thermoelasticity theory is obtained according to the temperature gradient. The one-dimensional (1D) deformation (thermoelastic and electronic) is used to explain the main governing equations. The dimensionless fields and initial conditions are introduced during the PT transport processes. The main physical fields are obtained algebraically using the Laplace transform. The solution mechanism of the problem depends on boundary conditions which are taken at the free surface. The boundary conditions are formulated according to the mechanical ramp type. To obtain the solutions of the fields in the real space–time domain, the inversion of the Laplace transform according to the Riemann-sum approximation method is used. According to the numerical results and the graphical representations, some comparisons are made under the impact of laser pulses and variable thermal conductivity as well as the variation of thermal memories.