Surface potential and thin film quality of low work function metals on epitaxial graphene

被引:0
作者
Matthew DeJarld
Paul M. Campbell
Adam L. Friedman
Marc Currie
Rachael L. Myers-Ward
Anthony K. Boyd
Samantha G. Rosenberg
Shojan P. Pavunny
Kevin M. Daniels
D. K. Gaskill
机构
[1] US Naval Research Laboratory,Department of Electrical and Computer Engineering
[2] Laboratory for Physical Sciences,undefined
[3] University of Maryland,undefined
来源
Scientific Reports | / 8卷
关键词
Calculated Work Function; Epitaxial Graphene (EG); Kelvin Probe Force Microscopy (KPFM); Rare Earth Metal Films; Photovoltage;
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摘要
Metal films deposited on graphene are known to influence its electronic properties, but little is known about graphene’s interactions with very low work function rare earth metals. Here we report on the work functions of a wide range of metals deposited on n-type epitaxial graphene (EG) as measured by Kelvin Probe Force Microscopy (KPFM). We compare the behaviors of rare earth metals (Pr, Eu, Er, Yb, and Y) with commonly used noble metals (Cr, Cu, Rh, Ni, Au, and Pt). The rare earth films oxidize rapidly, and exhibit unique behaviors when on graphene. We find that the measured work function of the low work function group is consistently higher than predicted, unlike the noble metals, which is likely due to rapid oxidation during measurement. Some of the low work function metals interact with graphene; for example, Eu exhibits bonding anomalies along the metal-graphene perimeter. We observe no correlation between metal work function and photovoltage, implying the metal-graphene interface properties are a more determinant factor. Yb emerges as the best choice for future applications requiring a low-work function electrical contact on graphene. Yb films have the strongest photovoltage response and maintains a relatively low surface roughness, ~5 nm, despite sensitivity to oxidation.
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