Quasielastic light scattering in the near IR from photoexcited electron-hole plasma created in a GaAs layer with embedded InAs quantum dots

The paper reports the development of a high-sensitivity technique for measurement of inelastic electronic light-scattering spectra in the near-IR region, which are excited by a stable single-mode cw YAG:Nd laser operating at 1064.4-nm. This technique has permitted detection for the first time of quasielastic scattering of light by a photoexcited electron-hole plasma generated in a GaAs layer with an embedded self-organized ensemble of InAs quantum dots. A considerable resonant enhancement of the quasielastic electronic scattering intensity exceeding the level characteristic of the bulk material by two orders of magnitude has been revealed. The main scattering mechanism, involving joint diffusion of electrons and holes, has been elucidated.