Numerical simulation of film growth during molecular-beam epitaxy

被引：0

作者：

M. G. Evtikhov

S. A. Nikitov

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来源：

Journal of Communications Technology and Electronics | 2007年 / 52卷

关键词：

02.70.-c; 85.40.Sz;

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摘要：

The equations describing the perfect growth of films during molecular-beam epitaxy are generalized and applied to the description of deposition on inhomogeneous and inhomogeneously rough substrates. A method for numerical solution of generalized KPZ-VLDS equations is proposed. This method is applicable to both 1D and 2D film models. With the help of this numerical model, the effects that can be interpreted as formation and interaction of island irregularities are studied, although the analogy with coalescence is not complete. The mechanism describing the effect of nonlinearity in the equations of film growth is interpreted as conservation of the inhomogeneity size in the process of smoothing of solutions.

引用

页码：860 / 864

页数：4

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