Electrical Properties of ZnSe Epilayers on GaAs(001)

被引：0
作者：
Yu. G. Sadof'ev
V. G. Litvinov
机构：
[1] Russian Academy of Sciences,Lebedev Institute of Physics
[2] Ryazan State Radio Engineering Academy,undefined
来源：
Inorganic Materials | 2000年 / 36卷
关键词：
Growth Rate; Inorganic Chemistry; GaAs; Electrical Property; Energy Spectrum;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The electrical properties (conductivity, mobility and concentration of majority carriers, and energy spectrum of deep-level defects) of ZnSe layers grown on GaAs(001) by molecular-beam epitaxy were investigated. The results were used to assess the effects of growth rate, ZnSe surface reconstruction, and Ga indiffusion from the substrate on the parameters of the epilayers.
引用
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页码：1203 / 1207
页数：4
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