Formation of macropore nucleation centers in silicon by ion implantation

被引：0
作者：
E. V. Astrova
T. N. Vasunkina
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2002年 / 36卷
关键词：
Radiation; Silicon; Magnetic Material; Electromagnetism; Radiation Damage;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The possibility of obtaining a regular pattern of macropore nucleation centers in Si by ion implantation, instead of using the conventional V-shaped nucleation pits, has been studied. It is shown that selective radiation damage or local inversion of the conduction type is sufficient for macropore nucleation in some areas and passivation of others. The obtained results may be of use for practical applications and for better understanding of pore formation in silicon.
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页码：564 / 567
页数：3
相关论文
共 59 条
  • [1] Lehmann V.(1990)undefined J. Electrochem. Soc. 137 653-undefined
  • [2] Foll H.(1993)undefined J. Electrochem. Soc. 140 2836-undefined
  • [3] Lehmann V.(1996)undefined Appl. Phys. Lett. 68 747-undefined
  • [4] Gruning U.(2000)undefined Phys. Rev. B 61 R2389-undefined
  • [5] Lehmann V.(2000)undefined Appl. Phys. Lett. 77 2943-undefined
  • [6] Leonard S. W.(2001)undefined Appl. Phys. Lett. 78 1180-undefined
  • [7] Mondia J. P.(2000)undefined Nucl. Instrum. Methods Phys. Res. A 442 443-undefined
  • [8] van Driel H. M.(1996)undefined Thin Solid Films 276 138-undefined
  • [9] Chelnokov A.(2000)undefined Phys. Status Solidi A 182 145-undefined
  • [10] Wang K.(2000)undefined Sens. Actuators 82 254-undefined
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