Performance Analysis of MoTe2/MoSe2 and MoTe2/WSe2 Heterostructure Double-Gate MOSFET

In this work, the performance of a heterostructure molybdenum ditelluride (MoTe2/MoSe2 and MoTe2/WSe2) double-gate (DG) metal–oxide–semiconductor field-effect transistor (MOSFET) was investigated using a hybrid methodology. The device characteristics were obtained using 2H-type bilayer MoTe2 and a heterobilayer of MoTe2/MoSe2 and MoTe2/WSe2 as channel material in a DG MOSFET. The methodology uses both the QuantumWise Atomistix ToolKit (ATK) and Sentaurus TCAD (technology computer-aided design) tool to simulate the device characteristics. First, density functional theory was used to simulate the electrical parameters of bilayer 2H-MoTe2, heterobilayer MoTe2/MoSe2, and MoTe2/WSe2. The parameters (bandgap and effective mass, mobility, etc.) obtained using the atomistic simulator tool were exported into Sentaurus TCAD to simulate the drain current characteristics, such as on-current (Ion), Ion/Ioff ratio, subthreshold swing, and threshold voltage. The noise performance of the devices was also studied for the heterostructure DG MOSFET using impedance field method and compared with its bilayer MoTe2 counterpart values. Noise parameters such as noise power spectral density (SID) and noise figure as a function of both frequency and bias were also simulated, and noise components such as generation–recombination (G-R) noise, flicker noise, and white noise were obtained.