Broken adiabaticity induced by Lifshitz transition in MoS2 and WS2 single layers

被引:0
|
作者
Dino Novko
机构
[1] Institute of Physics,Center of Excellence for Advanced Materials and Sensing Devices
[2] Donostia International Physics Center (DIPC),undefined
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
The breakdown of the adiabatic Born-Oppenheimer approximation is striking dynamical phenomenon, however, it occurs only in a handful of layered materials. Here, I show that adiabaticity breaks down in doped single-layer transition metal dichalcogenides in a quite intriguing manner. Namely, significant nonadiabatic coupling, which acts on frequencies of the Raman-active modes, is prompted by a Lifshitz transition due to depopulation and population of multiple valence and conduction valleys, respectively. The outset of the latter event is shown to be dictated by the interplay of highly non-local electron-electron interaction and spin-orbit coupling. In addition, intense electron-hole pair scatterings due to electron-phonon coupling are inducing phonon linewidth modifications as a function of doping. Comprehending these intricate dynamical effects turns out to be a key for mastering characterization of electron doping in two-dimensional nano-devices by means of Raman spectroscopy.
引用
收藏
相关论文
共 50 条
  • [1] Broken adiabaticity induced by Lifshitz transition in MoS2 and WS2 single layers
    Novko, Dino
    COMMUNICATIONS PHYSICS, 2020, 3 (01)
  • [2] Spin effects in MoS2 and WS2 single layers
    Kioseoglou, G.
    Korkusinski, M.
    Scrace, T.
    Hanbicki, A. T.
    Currie, M.
    Jonker, B. T.
    Petrou, A.
    Hawrylak, P.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2016, 10 (01): : 111 - 119
  • [3] Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure
    He, Xin
    Li, Hai
    Zhu, Zhiyong
    Dai, Zhenyu
    Yang, Yang
    Yang, Peng
    Zhang, Qiang
    Li, Peng
    Schwingenschlogl, Udo
    Zhang, Xixiang
    APPLIED PHYSICS LETTERS, 2016, 109 (17)
  • [4] Enhancing excitons by oleic acid treatment in WS2, MoS2, and WS2/MoS2 heterostructure
    Wang, Yishu
    Zhai, Xiaokun
    Feng, Liefeng
    Gao, Tingge
    APPLIED PHYSICS EXPRESS, 2022, 15 (02)
  • [5] Raman scattering of the MoS2 and WS2 single nanotubes
    Virsek, Marko
    Jesih, Adolf
    Milosevic, Ivanka
    Damnjanovic, Milan
    Remskar, Maja
    SURFACE SCIENCE, 2007, 601 (13) : 2868 - 2872
  • [6] Tailoring the optical properties of MoS2 and WS2 single layers via organic functionalization
    Palummo, M.
    D'Auria, A. N.
    Grossman, C.
    Cicero, G.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2019, 31 (23)
  • [7] Controlling the Metal to Semiconductor Transition of MoS2 and WS2 in Solution
    Chou, Stanley S.
    Huang, Yi-Kai
    Kim, Jaemyung
    Kaehr, Bryan
    Foley, Brian M.
    Lu, Ping
    Dykstra, Conner
    Hopkins, Patrick E.
    Brinker, C. Jeffrey
    Huang, Jiaxing
    Dravid, Vinayak P.
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2015, 137 (05) : 1742 - 1745
  • [8] Sputtering and Electron Beam Irradiation of WS2/MoS2 and MoS2/WS2 Heterostructures for Enhanced Photoresponsivity
    Kim, Bong Ho
    Kwon, Soon Hyeong
    Yoon, Hongji
    Kim, Dong Wook
    Yoon, Young Joon
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2019, 18 : 1200 - 1203
  • [9] Large Surface Photovoltage of WS2/MoS2 and MoS2/WS2 Vertical Hetero-bilayers
    Kim, Bora
    Kim, Jayeong
    Tsai, Po-Cheng
    Choi, Hyeji
    Yoon, Seokhyun
    Lin, Shih-Yen
    Kim, Dong-Wook
    ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (06) : 2601 - 2606
  • [10] MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications
    Annika Grundmann
    Clifford McAleese
    Ben Richard Conran
    Andrew Pakes
    Dominik Andrzejewski
    Tilmar Kümmell
    Gerd Bacher
    Kenneth Boh Khin Teo
    Michael Heuken
    Holger Kalisch
    Andrei Vescan
    MRS Advances, 2020, 5 : 1625 - 1633