Γ-X mixing in GaAs-Ga1-xAlxAs quantum wells under hydrostatic pressure

被引：0
作者：
M. E. Mora-Ramos
S. Y. López
C. A. Duque
机构：
[1] Facultad de Ciencias,
[2] Universidad Autónoma del Estado de Morelos,undefined
[3] Av. Universidad 1001,undefined
[4] Facultad de Educación,undefined
[5] Universidad de Antioquia,undefined
[6] Instituto de Física,undefined
[7] Universidad de Antioquia,undefined
[8] Instituto de Física,undefined
来源：
The European Physical Journal B | 2008年 / 62卷
关键词：
71.55.Eq III-V semiconductors; 73.21.Fg Quantum wells;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The mixing between the Γ and X conduction-band valleys in GaAs-Ga1-xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ-X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ-X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga1-xAlxAs quantum wells.
引用
收藏
页码：257 / 261
页数：4
相关论文
共 23 条
[11]  
Burnett undefined(1993)undefined Phys. Rev. 47 1991-undefined
[12]  
Tischler undefined(2000)undefined Physica E 6 177-undefined
[13]  
Li undefined(1994)undefined Phys. Rev. B 50 18420-undefined
[14]  
Bednarek undefined(1995)undefined Phys. Rev. B 51 4687-undefined
[15]  
Tomić undefined(2004)undefined Phys. Rev. B 69 245305-undefined
[16]  
Dios-Leyva undefined(2001)undefined J. Phys.: Condens. Matter 13 9471-undefined
[17]  
López undefined(2003)undefined Phys. Stat. Sol. (c) 0 648-undefined
[18]  
Porras-Montenegro undefined(2004)undefined Phys. Rev. B 69 045323-undefined
[19]  
Duque undefined(2000)undefined Physica E 5 215-undefined
[20]  
Raigoza undefined(1993)undefined Phys. Rev. B 48 2465-undefined
123