Γ-X mixing in GaAs-Ga1-xAlxAs quantum wells under hydrostatic pressure

被引：0
作者：
M. E. Mora-Ramos
S. Y. López
C. A. Duque
机构：
[1] Facultad de Ciencias,
[2] Universidad Autónoma del Estado de Morelos,undefined
[3] Av. Universidad 1001,undefined
[4] Facultad de Educación,undefined
[5] Universidad de Antioquia,undefined
[6] Instituto de Física,undefined
[7] Universidad de Antioquia,undefined
[8] Instituto de Física,undefined
来源：
The European Physical Journal B | 2008年 / 62卷
关键词：
71.55.Eq III-V semiconductors; 73.21.Fg Quantum wells;
D O I：
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中图分类号：
学科分类号：
摘要：
The mixing between the Γ and X conduction-band valleys in GaAs-Ga1-xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ-X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ-X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga1-xAlxAs quantum wells.
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页码：257 / 261
页数：4
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