Investigation of silicon implanted with carbon ions

被引：0

作者：

S. V. Bulyarskii

A. S. Ambrozevich

S. S. Moliver

T. A. Dzhabrailov

R. M. Bayazitov

R. I. Batalov

机构：

[1] Ul’yanovsk State University,Kazan Physicotechnical Institute

[2] Russian Academy of Sciences,undefined

来源：

Technical Physics Letters | 2001年 / 27卷

关键词：

Silicon; Independent Method; Silicon Single Crystal;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The properties of silicon single crystals implanted with carbon ions were studied by two independent methods. It is demonstrated that the concentration of implanted carbon can be monitored by measuring the density of divacancies.

引用

页码：254 / 255

页数：1

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[6]

Bulyarskii S. V.(undefined)undefined undefined undefined undefined-undefined

[7]

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