Investigating polysilicon thin film structural changes during rapid thermal annealing of a thin film crystalline silicon on glass solar cell

被引:0
作者
Ian Brazil
Martin A. Green
机构
[1] University of New South Wales,ARC Photovoltaics Centre of Excellence
来源
Journal of Materials Science: Materials in Electronics | 2010年 / 21卷
关键词
Polysilicon; Rapid Thermal Annealing; Cross Sectional Transmission Electron Microscopy; Transmission Electron Microscopy Examination; Convergent Beam Electron Diffraction;
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中图分类号
学科分类号
摘要
Structural changes resulting from rapid thermal annealing were investigated in a thin film crystalline silicon on textured glass solar cell, in particular grain parameters and film modulus. Electron backscatter diffraction showed no significant change in grain dimensions post annealing and no preferred orientation. Columnar grains with large defect densities were visible in transmission electron microscopy with no qualitative change visible post annealing. A similar modulus obtained by nanoindenation, both pre and post annealing suggests no quantitative structural change. The film structure appears unchanged by rapid thermal annealing.
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页码:994 / 999
页数:5
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