Method for determining the stoichiometric composition of a mercury cadmium telluride solid solution from capacitance-voltage characteristics

被引：0
|
作者：
I. M. Ivankiv
A. M. Yafyasov
V. B. Bogevol’nov
A. D. Perepelkin
机构：
[1] St. Petersburg University,Institute of Physics
来源：
Semiconductors | 2001年 / 35卷
关键词：
Mercury; Cadmium; Solid Solution; Surface Layer; Comparative Analysis;
D O I：
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中图分类号：
学科分类号：
摘要：
A procedure is proposed for determining the stoichiometric composition of an intrinsic semiconductor Hg1−xCdxTe, relying upon the field effect in an electrolyte. An original comparative analysis of experimental capacitance-voltage characteristics and those calculated in terms of a quantum description of the space charge region provides the x value in the surface layer of the semiconductor at a depth comparable with the Debye screening radius. The determined stoichiometric compositions are presented for four Hg1−xCdxTe samples (x=0.205, 0.245, 0.290, and 0.330).
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页码：525 / 528
页数：3
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