Electrical properties of anisotype heterojunctions n-CdZnO/p-CdTe

被引：0
作者：
V. V. Brus
M. I. Ilashchuk
V. V. Khomyak
Z. D. Kovalyuk
P. D. Maryanchuk
K. S. Ulyanytsky
机构：
[1] National Academy of Sciences of Ukraine,Frantsevich Institute of Materials Science Problems
[2] Chernivtsi Department,undefined
[3] Fedkovich Chernivtsi National University,undefined
来源：
Semiconductors | 2012年 / 46卷
关键词：
Versus Characteristic; Reverse Bias; Space Charge Region; Forward Bias; Contact Potential Difference;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Anisotype surface-barrier n-Cd0.5Zn0.5O/p-CdTe heterojunctions are fabricated by the high-frequency sputtering of a Cd0.5Zn0.5O alloy film onto a freshly cleaved single-crystal CdTe surface. The main electrical properties of the heterojunctions are studied and the dominant mechanisms of charge transport are established, namely, the multistage tunnel-recombination mechanism under forward bias, Frenkel-Pool emission, and tunneling under forward bias. The influence of the surface electrically active states at the heterojunction interface is analyzed and their surface concentration is evaluated: Nss ∼ 1014 cm−2.
引用
收藏
页码：1152 / 1157
页数：5
相关论文
共 122 条
[11]  
Belonogov E. K.(1987)undefined Solar Cells 19 163-undefined
[12]  
Enriquez J. P.(2005)undefined J. Optoelectron. Adv. Mater. 7 823-undefined
[13]  
Mathew X.(2001)undefined Mater. Chem. Phys. 68 249-undefined
[14]  
Hernandez G. P.(2011)undefined Proc. SPIE 8338 83381A-undefined
[15]  
Pal U.(2004)undefined Mater. Sci. Eng. B 111 9-undefined
[16]  
Magana C.(2003)undefined J. Cryst. Growth 256 78-undefined
[17]  
Acosta D. R.(2011)undefined Sens. Electron. Microsyst. Technol. 2 65-undefined
[18]  
Guardian R.(2006)undefined Eur. Phys. J. Appl. Phys. 34 7-undefined
[19]  
Toledo J. A.(2009)undefined Acta Phys. Polon. A 116 859-undefined
[20]  
Puente G. C.(2011)undefined Semi-conductors 45 1077-undefined
12345678910