Electrical properties of anisotype heterojunctions n-CdZnO/p-CdTe

被引：0
作者：
V. V. Brus
M. I. Ilashchuk
V. V. Khomyak
Z. D. Kovalyuk
P. D. Maryanchuk
K. S. Ulyanytsky
机构：
[1] National Academy of Sciences of Ukraine,Frantsevich Institute of Materials Science Problems
[2] Chernivtsi Department,undefined
[3] Fedkovich Chernivtsi National University,undefined
来源：
Semiconductors | 2012年 / 46卷
关键词：
Versus Characteristic; Reverse Bias; Space Charge Region; Forward Bias; Contact Potential Difference;
D O I：
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中图分类号：
学科分类号：
摘要：
Anisotype surface-barrier n-Cd0.5Zn0.5O/p-CdTe heterojunctions are fabricated by the high-frequency sputtering of a Cd0.5Zn0.5O alloy film onto a freshly cleaved single-crystal CdTe surface. The main electrical properties of the heterojunctions are studied and the dominant mechanisms of charge transport are established, namely, the multistage tunnel-recombination mechanism under forward bias, Frenkel-Pool emission, and tunneling under forward bias. The influence of the surface electrically active states at the heterojunction interface is analyzed and their surface concentration is evaluated: Nss ∼ 1014 cm−2.
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页码：1152 / 1157
页数：5
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