Influence of vacuum annealing on the properties of SILAR CuInS2 thin films and optimization of annealing duration

被引：0
作者：
B. Maheswari
M. Dhanam
机构：
[1] Kongunadu Arts and Science College,Department of Physics
来源：
Journal of Materials Science: Materials in Electronics | 2013年 / 24卷
关键词：
Vacuum Annealing; Anionic Solution; Annealing Duration; Chalcopyrite Structure; SILAR Technique;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The structural, compositional, morphological and optical properties of as-deposited and vacuum annealed CuInS2 thin films prepared by successive ionic layer adsorption and reaction method are studied by X-ray diffractometer, energy dispersive X-ray analyzer, scanning electron microscope and spectrophotometer respectively. The influence of vacuum annealing on the properties of CuInS2 (CIS) thin films is discussed, annealing duration has also been optimized and reported in this paper.
引用
收藏
页码：3481 / 3489
页数：8
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