Metal-oxide-semiconductor field-effect transistor (MOSFET) ultrafast switching research and its applications

被引：0
|
作者：
V. V. Togatov
D. S. Ternovskii
机构：
[1] National Research University of Information Technologies,
[2] Mechanics,undefined
[3] and Optics,undefined
来源：
Instruments and Experimental Techniques | 2013年 / 56卷
关键词：
Drain Current; Capacitive Load; Negative Bias Voltage; Gate Current; Delay Stage;
D O I：
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中图分类号：
学科分类号：
摘要：
Direct experiments confirm the mechanism of metal-oxide-semiconductor field-effect transistor (MOSFET) ultrafast switching during which the switching times do not exceed units of nanoseconds. It was experimentally established that, in contrast to the known nanosecond-range switches that either close or break a circuit, a MOSFET in the ultrafast switching mode can perform both functions. Possible applications of the MOSFET ultrafast switching effect in circuits of pulse formers with nanosecond rise and fall times are considered and illustrated.
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页码：59 / 65
页数：6
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