Improved deposition of ZnO:Ga thin films by sputtering with the chamber pressure

被引：0
|
作者：
Deok Kyu Kim
机构：
[1] Wonkwang University,Department of Electrical Engineering
来源：
Journal of the Korean Physical Society | 2023年 / 83卷
关键词：
ZnO:Ga; RF magnetron sputtering; Chamber pressure; Stoichiometric composition; Ga concentration; Grain boundary scattering; Residual gases;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Characteristics of ZnO:Ga (GZO) thin films fabricated by RF magnetron sputtering using chamber pressure have been investigated. Low chamber pressure results in low resistivity due to high mobility and carrier concentration. Result is ascribed to minimizing the influence of residual gases in the chamber, which promotes stoichiometric composition, increases Ga concentration and reduces grain boundary scattering. The average transmittance of all deposited films is over 85%. Therefore, controlling the chamber pressure is a critical parameter in the characterization of GZO thin films and a valuable method for obtaining films with better characteristics.
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页码：867 / 872
页数：5
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