Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

被引：0
作者：
Peng Cui
Yuanjie Lv
Huan Liu
Aijie Cheng
Chen Fu
Zhaojun Lin
机构：
[1] Shandong University,School of Microelectronics
[2] Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated Circuit (ASIC)
[3] Shandong University,School of Mathematics
来源：
Scientific Reports | / 8卷
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摘要：
The single-tone power of the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths was measured. A distinct improvement in device linearity was observed in the sample with a larger gate width. The analysis of the variation of the parasitic source access resistance showed that, as the gate bias is increased, the polarization Coulomb field scattering can offset the increased polar optical phonon scattering and improve the device linearity. This approach is shown to be effective in improving the device linearity of AlGaN/GaN HFETs.
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