Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction

被引：0

作者：

A. S. Shashkina

S. D. Hanin

机构：

[1] St. Petersburg University of Film and Television,

[2] Budyonny Military Academy of Communications,undefined

来源：

Semiconductors | 2019年 / 53卷

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摘要：

引用

页码：838 / 843

页数：5

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[1] Simulation Approach to Modeling of the Avalanche Breakdown of a p-n Junction
Shashkina, A. S.
Hanin, S. D.
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[2] InSb P-N junction with avalanche breakdown behavior
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Japanese Journal of Applied Physics, Part 2: Letters, 1989, 28 (11):
[3] PROBABILITY OF TRIGGERING OF AN AVALANCHE IN BREAKDOWN OF A P-N-JUNCTION
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[4] INSB P-N-JUNCTION WITH AVALANCHE BREAKDOWN BEHAVIOR
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[5] AVALANCHE BREAKDOWN CALCULATIONS FOR A PLANAR P-N JUNCTION
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[6] AVALANCHE BREAKDOWN VOLTAGES OF SELECTIVELY DIFFUSED P-N JUNCTION
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[7] CALCULATION OF AVALANCHE BREAKDOWN VOLTAGE OF THE INP P+-N JUNCTION
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[8] EFFECT OF INHOMOGENEITIES ON AVALANCHE BREAKDOWN VOLTAGE OF A P-N-JUNCTION
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[9] Problems related to the avalanche and secondary breakdown of silicon P-N junction
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[10] EFFECTIVE CARRIER IONIZATION RATE IN A P-N JUNCTION AT AVALANCHE BREAKDOWN
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