Compositionally graded quaternary electron blocking layer for efficient deep ultraviolet AlGaN-based light-emitting diodes

被引：0
作者：
Muhammad Usman
Shahzeb Malik
Masroor Hussain
Shazma Ali
Sana Saeed
Abdur-Rehman Anwar
Munaza Munsif
机构：
[1] Ghulam Ishaq Khan Institute of Engineering Sciences and Technology,Faculty of Engineering Sciences
[2] Ghulam Ishaq Khan Institute of Engineering Sciences and Technology,Faculty of Computer Sciences and Engineering
来源：
Optical Review | 2022年 / 29卷
关键词：
III-V; Luminescence; Ultraviolet; AlGaN; Quantum wells; Simulation; Efficiency;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We present the enhancement of ultraviolet (UV) light-emitting diodes (LEDs) using numerical analysis. We have employed a compositionally graded quaternary (AlInGaN) electron blocking layer (EBL) instead of ternary/conventional (AlGaN) EBL. Comparison between our proposed device and reference device reveal that our proposed device shows improved radiative recombination rate and, hence, high emission spectrum. Consequently, the proposed device structure exhibits considerable reduction in efficiency droop at high current density.
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页码：498 / 503
页数：5
相关论文
共 145 条
[1]  
Khan A(2008)Ultraviolet light-emitting diodes based on group three nitrides Nat. Photonics 2 77-84
[2]  
Balakrishnan K(2002)Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN Appl. Phys. Lett. 81 4658-4660
[3]  
Katona T(2021)AlGaN-based ultraviolet light-emitting diodes: challenges and opportunities Luminescence 36 294-305
[4]  
Gaska R(2008)Ultraviolet communications: potential and state-of-the-art IEEE Commun. Mag. 46 67-73
[5]  
Chen C(2011)Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection Water Res. 45 1481-1489
[6]  
Yang J(2010)Light-emitting diodes—their potential in biomedical applications Renew. Sustain. Energy Rev. 14 2161-2166
[7]  
Kuokstis E(2013)Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes J. Disp. Technol. 9 212-225
[8]  
Khan A(1998)Thermal ionization energy of Si and Mg in AlGaN J. Cryst. Growth 189 528-531
[9]  
Tamulaitis G(2015)Recent progress in AlGaN-based deep-UV LEDs Electron. Commun. Japan 98 1-8
[10]  
Yilmaz I(2015)Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer Superlattices Microstruct. 88 467-473
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