Electronic bond rupture of Si-Dimers on Si(001)-(2x1) induced by pulsed laser excitation

被引：0

作者：

J. Kanasaki

K. Katoh

Y. Imanishi

K. Tanimura

机构：

[1] Graduate School of Osaka City University,Department of Mechanical and Physical Engineering

[2] Osaka University,The Institute of Scientific and Industrial Research

来源：

Applied Physics A | 2004年 / 79卷

关键词：

Microscopy; Laser Pulse; Microscopy Study; Scanning Tunneling Microscopy; Laser Excitation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A scanning tunneling microscopy study has revealed that 532 nm laser pulses of fluences well below melt and ablation thresholds induce electronic bond rupture of Si-dimers on the Si(001)-(2x1), resulting in the formation of single dimer-vacancies followed by progressive growth into vacancy clusters. The rate of bond rupture on the intrinsic (2x1) structure shows super-linearity with respect to excitation intensity, and saturates as the number of vacancies reaches a few percent, relative to total dimer sites. The mechanism of laser-induced bond rupture is discussed based on these results.

引用

页码：865 / 868

页数：3